The effects of external optical feedback on the power penalty of DFB-LD modules for 2.5 Gbs^-1 optical transmission systemsPARK, K. H; LEE, J. K; HAN, J. H et al.Optical and quantum electronics. 1998, Vol 30, Num 1, pp 23-31, issn 0306-8919Article

LP-MOCVD grown (InAs)_m(GaAs)_m short period superlattices in InPOH, D. K; SUH, K. S; CHOO, H et al.Journal of electronic materials. 1996, Vol 25, Num 3, pp 485-489, issn 0361-5235Conference Paper

Adaptive physical rate based admission control at EDCA in IEEE 802.11e WLANsLEE, S; KIM, T; YOON, S et al.Electronics Letters. 2007, Vol 43, Num 22, pp 1208-1209, issn 0013-5194, 2 p.Article

Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to Al_xGa_yIn_1-x-yAs (x + y = 0.47-8) buffer layerLEE, H. G; HONG, S. K; KIM, S. G et al.Journal of crystal growth. 1997, Vol 177, Num 1-2, pp 28-32, issn 0022-0248Article

Failure analysis for RF characteristics of GaAs MESFETsMUN, J. K; KIM, C.-H; JAE JIN LEE et al.Microelectronics and reliability. 1999, Vol 39, Num 1, pp 69-75, issn 0026-2714Article

Degradation mechanism of GaAs MESFETsJAE KYOUNG MUN; LEE, J.-L; HAECHEON KIM et al.Microelectronics and reliability. 1998, Vol 38, Num 1, pp 171-178, issn 0026-2714Article

Pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors with super low noise performances of 0.41 dB at 18 GHzLEE, J.-H; YOON, H.-S; PARK, B.-S et al.ETRI journal. 1996, Vol 18, Num 3, pp 171-179, issn 1225-6463Article

High-low doped power MESFET with 32.0dBm output power for 3.0V digital/analogue dual-mode hand-held telephonesLEE, J.-L; MUN, J. K; KIM, H et al.Electronics Letters. 1995, Vol 31, Num 16, pp 1390-1391, issn 0013-5194Article

A low distortion and low dissipation power amplifier with gate bias control circuit for digital/analog dual-mode cellular phonesMAENG, S.-J; LEE, C.-S; YOUN, K.-J et al.ETRI journal. 1997, Vol 19, Num 2, pp 35-47, issn 1225-6463, 83 [14 p.]Article

Molecular beam epitaxy growth of indium-rich In_xGa_1-xAs/In_yAl_1-yAs/InP structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layerHONG, S.-K; LEE, H.-G; LEE, J.-J et al.Journal of crystal growth. 1996, Vol 169, Num 3, pp 435-442, issn 0022-0248Article

Effects of implanted materials on impurity-induced layer disordering in strained Ga_0.8In_0.2As/Ga_xIn_1-xAs_yP_1-y/Ga_0.51In_0.49P/GaAs quantum well structureJANG, D. H; LEE, J. K; PARK, K. H et al.Japanese journal of applied physics. 1997, Vol 36, Num 10B, pp L1364-L1366, issn 0021-4922, 2Article

Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structuresLU, W; LEE, J.-H; YOON, H.-S et al.Solid state communications. 1996, Vol 99, Num 10, pp 713-716, issn 0038-1098Article